Band bending - Wikipedia
网页In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending.
能带弯曲 - 百度百科
网页能带 弯曲（bandbending）：半导体能带图表示电子在原子周期 势场 中处于不同能量的能级上；对电子而言，越是顺着 电场方向，其电势越低（负值），其势能就越大；因此，顺着电场方向，电子所处的能级越来越高，于是便发生弯曲。. 显然，如果半导体表面没 ...
Band Bending in Semiconductors: Chemical and Physical …
网页2012年7月11日 · Abin Sebastian, Siby Mathew, Fazalurahman Kuttassery, Sebastian N. Remello, Keito Sano, Hiroshi Tachibana, Haruo Inoue. Factors Controlling the Photochemical Two-Electron Water Oxidation Initiated By One-Electron in the Molecular Catalyst Sensitized System for Artificial Photosynthesis.
Band Bending - an overview | ScienceDirect Topics
网页Band bending refers to the phenomena of spatially dependent band energies of electrons in the proximity of the surface or interface of a semiconductor. From: Progress in Surface Science, 2016
Band diagram - Wikipedia
网页Rather, band bending refers to the local changes in electronic structure, in the energy offset of a semiconductor's band structure near a junction, due to space charge effects. The primary principle underlying band bending inside a semiconductor is space charge: a local imbalance in charge neutrality.
Spatial mapping of band bending in semiconductor devices using …
网页2018年9月13日 · Band bending is a central concept in solid-state physics and is the result of local variations in charge distribution, especially near semiconductor interfaces and surfaces 1,2,3.
Band Bending - an overview | ScienceDirect Topics
网页Band bending occurs, so that electron affinity (energy difference between vacuum level and bottom of the conduction band) is a more useful parameter for semiconductors than work function (energy difference between vacuum level and Fermi level), as for semiconductors the latter is affected by applied field. Emission arises from either the ...
Work Function and Band Bending at Semiconductor Surfaces
网页Usually, the difference between the potential energy “just outside” and the electrochemical potential or the Fermi energy inside the solid is defined as the work function: As a surface property, the work function determines the functioning of such devices as thermal, field-effect and photocathodes.
Schottky barrier formation and band bending revealed by first ...
网页2015年6月12日 · The band bending is caused by a dopant induced dipole field between the interface and the dopant site, whereas the pristine Au/TiO 2 interface does not show any band...
Band Bending at Metal-Semiconductor Interfaces, Ferroelectric Surfaces ...
网页A survey of the ability of X-ray photoelectron spectroscopy to be used in the determination of band bendings at surfaces and interfaces. A review of the existing literature will be connected with some very basic theoretical aspects of band bendings in semiconductors and with an overview of recent experimental results.