CGD says that the multi-level design proposed by IFPEN reveals several benefits of ICeGaN including increased efficiency, higher switching frequencies, reduced EMI, enhanced thermal management, as ...

新微半导体基于自有硅基氮化镓外延片，提供的覆盖高、中和低压（40V-650V）晶圆代工产品，采用非金 GaN HEMT 工艺，具有高击穿电压以及高工作频率等卓越优势，具有栅极最小线宽0.5μm、P 型栅 ...