This unique configuration makes CMOS circuits ideal for a wide range of electronic devices that require energy efficiency and reliable operation. The next step is photolithography, a technique used to ...
In this research, we have developed a three-layer color image sensor using organic films that detect only blue and only green light, layered vertically over a CMOS *1 image sensor that detects red ...
While for FD SOI, the body is about 5 nm to 20 nm thick. Owing to oxide layer isolation, the drain/source parasitic capacitances are reduced. So, the delay and dynamic power consumption of the device ...
We introduce a fabless approach to embed active nanophotonics in bulk CMOS by co-designing the back-end-of-line metal layers for optical functionality. Without changing any of the design rules imposed ...
Onsemi has installed a 65nm BCD (bipolar CMOS DMOS) process at its fab in East Fishkill, New York, on a line that can handle 300mm wafers. Called 'Treo ...