The US and India reached an agreement to work together on setting up a semiconductor fabrication plant in the South Asian ...

Infineon Austria has succeeded in producing 300-millimeter gallium nitride wafers on an integrated pilot line in the existing 300-millimeter silicon production facility at its fab in Villach ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. News ...

Infineon has taken a major step forward in the mass production of ultra-modern power semiconductors made of gallium nitride (GaN). The German company announced on Wednesday that it will be able to ...

Raytheon has been awarded a three-year, two-phase contract from DARPA to develop ultra-wide bandgap semiconductors based on ...

Researchers at Cornell University, in collaboration with the Polish Academy of Sciences, have developed a groundbreaking ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

Gallium nitride (GaN) semiconductors can now be grown without ammonia, a toxic chemical that needs a sophisticated detoxifying system before it can be released into the atmosphere. The new ...

On Wednesday, RTX Corporation (NYSE:RTX) said Raytheon has secured a three-year, two-phase contract from DARPA to develop ...