Light-emitting diodes based on group III/nitride semiconductors ... It is possible to generate light in semiconductor materials (such as GaN or AlInGaP) by injecting electrons into the conduction ...

Mouser Electronics, Inc. announces a new eBook in collaboration with Analog Devices, Inc. (ADI) and Bourns, exploring the ...

Mouser has released a new eBook in collaboration with Analog Devices, Inc. (ADI) and Bourns exploring the challenges and benefits of GaN technology in the pursuit of efficiency, performance, and ...

Featuring 46 papers covering a wide range of materials, device types and applications, this volume presents state-of-the-art works from top academic and research institutions in the areas of high ...

Researchers at Nichia Corporation have demonstrated green InGaN-based lasers grown on c-plane sapphire, with lifetimes capable of supporting commercial applications. The demonstration of green ...

Amid such a circumstance, Professor Akasaki, Professor Amano and Professor Nakamura worked on the high-quality single crystallization and the p-type doping of gallium nitride (GaN), both of which ...