Previous photolithography technologies used transmissive masks protected by a pellicle. For EUV lithography, however, the masks must be reflective and cannot have a protective pellicle as this ...

Once the photoresist is applied, a mask with the desired pattern is placed between a ... NIL is not limited by the diffraction or interference effects that limit the resolution of optical and electron ...

Ultraviolet (UV) light is shone through the photomask, exposing the photoresist underneath except where the mask blocks the ... it faces limitations such as diffraction and scattering of light, which ...

A research team led by Xuesong Mei and Jianlei Cui from Xi'an Jiaotong University has made significant progress in the field of nanotechnology. They have successfully achieved the direct writing of ...

Recently, a research team led by Xuesong Mei and Jianlei Cui from Xi’an Jiaotong University has made significant progress in ...

A new study reveals a novel method for creating nanostructures on Au nano-films using a laser-irradiated scanning probe technique.

Nonetheless, EUV lithography is a next-generation technology ... but a thickness optimization of the absorber stack is required to obtain the best performance.” Researchers employed mask diffraction ...