Samsung’s current 286-layer V9 NAND chips marked a significant milestone, but the 400-layer V10 is expected to redefine ...
NAND Flash is named after the NAND (NOT-AND) logic gate, which is used in its basic architecture. The term "NAND" is derived from the way the memory cells are organized in a series-connected structure ...
In a two-tier 3D NAND structure, the upper and lower channel hole profile can be different, and this combination of different profiles leads to different top-down visible areas. The visible area is ...
Cadence IP Controller for ONFI NAND and Toggle NAND NAND Flash memory is widely used for data storage in computers and multiple consumer and enterprise applications ...
NANDFCTRL2 is a VHDL IP core implementing an interface to NAND flash memory devices. The core supports ONFI 4.0 and provides DMA transfers to and from the memory. The core implements a BCH EDAC ...
Samsung Electronics and SK Hynix are advancing next-generation memory technology with "ultra-low-temperature" etching, a technique initially applied to high-density ...
This vertical integration has relaxed the lithography requirements for 3D NAND devices, and has instead migrated the most complex process challenges to deposition and etch. 2 The primary structure is ...
Samsung Electronics has outlined its semiconductor storage roadmap, detailing plans for its next-generation V-NAND and DRAM technologies. In 2026, the company will launch a V-NAND product featuring ...
Samsung Electronics is reassigning top-tier researchers from its Semiconductor Research Center to various business units, ...
NAND flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) The reason why NAND Flash is called this way is readily apparent from the way the cells are connected, with a number ...
It’s easy to love Apple’s powerful little desktop computer, as long as you can avoid buying more RAM or storage.
I am pleased to share that over the last five years, we have delivered total returns of 378 per cent and a dividend yield of ...