Vishay Intertechnology has introduced a150 V TrenchFET Gen V n-channel power MOSFET in the PowerPAK SO-8S (QFN 6x5) package ...

Ghislain Despesse, Research Director at CEA-Leti, explains how, building on its earlier breakthroughs introducing a new way ...

Toshiba Electronics Europe has announced early test samples in bare die format of new 1200V SiC MOSFETs with low ...

Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

GlobalFoundries and the US Department of Commerce have announced an award of up to $1.5 billion in direct funding to GF ...

STMicroelectronics has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS (th)), combining the ...

Toshiba Electronics Europe has introduced a new gate driver IC series for three-phase brushless DC (BLDC) motors used in ...

Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in drive-motor inverters of electric ...

Company to use funds to expand manufacturing of SiC wafers for EVs As part of the Biden-Harris Administration’s Investing in ...