SK Group's silicon wafer manufacturer SK Siltron has confirmed that it will receive a loan of US$544 million from the US Department of Energy (DOE) to invest in its silicon carbide... SK Hynix has ...
Demo developed with IFP Energies Nouvelles delivers high 30 kW/l power density and ease of paralleling Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN), a French public research and ...
Defence Research and Development Organisation develops methods for making 4-inch SiC wafers and GaN HEMTs up to 150W India's Defence Research and Development Organisation (DRDO) has announced a ...
Abstract: Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs).
As of 10:45 AM EST. Market Open. Contributes to higher efficiency in automotive electric compressors and industrial equipment inverters ROHM's New Automotive-grade AEC-Q101 Qualified 4th ...
Analog Devices acquired Flex Logix‘s technology assets, along with its technical team. Semiconductor global sales increased 23% in Q3 2024 $166B, up almost 11% versus the same period in 2023, ...