The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...
The upcoming DRAM, expected in 2027, will utilize a Vertical Channel Transistor (VCT) structure at the 0a nm process node. Currently, Samsung's leading NAND and DRAM processes are the 9th ...
Samsung Electronics and SK Hynix are advancing next-generation memory technology with "ultra-low-temperature" etching, a technique initially applied to high-density ...
The series group will conduct (and pull the bit line low) if the selected bit has not been programmed. The hierarchical structure of NAND flash starts at a cell level which establishes strings, then ...
NANDFCTRL2 is a VHDL IP core implementing an interface to NAND flash memory devices. The core supports ONFI 4.0 and provides DMA transfers to and from the memory. The core implements a BCH EDAC ...
Kioxia developed a new 3D structure to improve reliability and prevent degradation of NAND-type cell performance. Degradation of performance typically occurs when the number of stacked layers ...