At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.
Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the PAC5556A + ICeGaN evaluation kit (EVK). This collaboration combines Qorvo's high ...
Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...
Nexperia has entered into a partnership with KOSTAL, a German automotive supplier, to produce wide bandgap (WBG) devices that more closely match the exacting requirements of automotive applications.