The rise of the GeSn laser - Nature Photonics
2015年2月3日 · The development of a group IV semiconductor laser that is CMOS-compatible represents a step towards the creation of fully integrated electronic and photonic circuitry.
GeSnOI mid-infrared laser technology | Light: Science ... - Nature
2021年11月17日 · Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV...
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and …
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the hybrid III–V-on-Si integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm.
Lasing in direct-bandgap GeSn alloy grown on Si - Nature
2015年1月19日 · Nature Photonics - Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well as linewidth narrowing...
Room temperature optically pumped GeSn microdisk lasers
2022年2月2日 · GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2% of Sn. We report a threshold of 3.27 MW …
Electrically injected GeSn lasers on Si operating up to 100 K
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration, and significant progress in GeSn material development shows promise for such laser devices. While there are many reports focused on optically pumped lasers, in this work, we demonstrate electrically injected GeSn lasers on Si.
Direct-indirect GeSn band structure formation by laser Radiation…
2020年8月1日 · Graded bandgap GeSn structure can be formed by laser processing. Direct bandgap GeSn is achieved by Sn enhancement from 4% to 14%. Differential reflectivity signal & EDS confirm indirect-direct transition. Carrier lifetime of …
[2405.10163] Electrically Injected mid-infrared GeSn laser on Si ...
2024年5月16日 · Demonstrations of optically pumped GeSn laser at room under pulsed condition and at cryogenic temperature under continuous-wave excitation show great promise of GeSn lasers to be efficient electrically injected light sources on Si. Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20, 40, and 80 micron ridge widths.
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at …
Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20 μm, 40 μm, and 80 μm ridge widths. A lasing threshold of 0.756 kA/cm 2 at 77 K, emitting wavelength of 2722 nm, and maximum operating temperature of 140 K were obtained. The lower threshold current density compared to previous works was achieved by reducing ...
GeSn Laser Technologies for Integrated Photonics - IEEE Xplore
We present our latest results on GeSn laser technologies, including high-quality GeSn-on-insulator substrates and improved microdisk and nanobeam GeSn lasers.