The rise of the GeSn laser - Nature Photonics
2015年2月3日 · The development of a group IV semiconductor laser that is CMOS-compatible represents a step towards the creation of fully integrated electronic and photonic circuitry.
GeSnOI mid-infrared laser technology | Light: Science ... - Nature
2021年11月17日 · Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of …
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and …
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the hybrid …
Lasing in direct-bandgap GeSn alloy grown on Si - Nature
2015年1月19日 · Nature Photonics - Lasing is experimentally demonstrated in a direct bandgap GeSn alloy, grown directly onto Si(001). The authors observe a clear lasing threshold as well …
Room temperature optically pumped GeSn microdisk lasers
2022年2月2日 · GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure …
Electrically injected GeSn lasers on Si operating up to 100 K
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration, and significant progress in GeSn material development shows promise for such laser devices. …
Direct-indirect GeSn band structure formation by laser Radiation…
2020年8月1日 · Graded bandgap GeSn structure can be formed by laser processing. Direct bandgap GeSn is achieved by Sn enhancement from 4% to 14%. Differential reflectivity signal …
[2405.10163] Electrically Injected mid-infrared GeSn laser on Si ...
2024年5月16日 · Demonstrations of optically pumped GeSn laser at room under pulsed condition and at cryogenic temperature under continuous-wave excitation show great promise of GeSn …
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at …
Here we report electrically injected GeSn lasers using Fabry-Perot cavity with 20 μm, 40 μm, and 80 μm ridge widths. A lasing threshold of 0.756 kA/cm 2 at 77 K, emitting wavelength of 2722 …
GeSn Laser Technologies for Integrated Photonics - IEEE Xplore
We present our latest results on GeSn laser technologies, including high-quality GeSn-on-insulator substrates and improved microdisk and nanobeam GeSn lasers.